(image found on legitreviews.com)Yesterday at the ISSCC (International Solid State Circuits Conference) 2009 event, Sandisk and Toshiba unveiled a new technology that will help to create a new foundation for small storage space capacity flash memory devices and also reduce the manufacturing costs too. They showcased a 32nm chip which is shown ot perform at the level of a 43 nm generation which was shown at the show last year. This new technology uses a 3-bit per cell technology, "which should make its way quickly into products such as Compact Flash and SDHC cards with up to 64 GB capacity as well as high-end consumer SSDs that should top 500 GB for the first time.
Samsung especially highlighted the benefits of such a small chip for microSD cards that are typically used as storage expansion in cellphones, as it provides twice the capacity of the 43 nm chip. The die size of a 32 Gb 32 nm chip is just 113 mm2. Mass production of this chip is expected to begin in the second half of this year.
The company also announced a new 43 nm product – a 4-bit per cell memory chip. The chip features a capacity of 64 Gb on a single die, which should be able drive down the cost of SSDs substantially. Sandisk said that the write performance of the chip is about 7.8 MB/s, which is close to current multi-level cell technologies. The company did not say when its “X4” technology will be ready for production.
Note that it takes 8 bits to form a byte, meaning single 32 Gb (gigabit) chips are actually 4 GB (gigabyte) storage devices."
Taking SSDs beyond half a terabyte: Sandisk's 32nm flash (TG Daily)
SanDisk shows off multi-level cell make over X4 and X3 flash dies (Channel Register)
Sandisk shrinking flash (the inquirer)
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